mosfet metaloxidesemiconductorfieldeffecttransistor optimos?power-transistor,80v optimos?3power-transistor ipa057n08n3g datasheet rev.2.2 final powermanagement&multimarket
ipa057n08n3 g opti mos (tm) 3 power-transistor features ? ideal for high frequency switching and sync. rec. ? optimized technology for dc/dc converters ? excellent gate charge x r ds(on) product (fom) ? n-channel, normal level ? 100% avalanche tested ? pb-free plating; rohs compliant ? qualified according to jedec 1) for target applications ? halogen-free according to iec61249-2-21 ? fully isolated package (2500 vac; 1 minute) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25?c 2) 60 a t c =100?c 43 pulsed drain current 3) i d,pulse t c =25?c 240 avalanche energy, single pulse 4) e as i d =60?a, r gs =25? w 290 mj gate source voltage v gs 20 v power dissipation p tot t c =25?c 39 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 to carry 119a. 4) see figure 13 for more detailed information value 1) j-std20 and jesd22 3) see figure 3 for more detailed information 2) current is limited by package; with an r thjc =1 k/w in a standard to-220 package the chip is able v ds 80 v r ds(on),max 5.7 m w i d 60 a product summary type ipa057n08n3 g package pg -to220- fp marking 057n08n rev. 2.2 page 1 2015-08-2 7
ipa057n08n3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.8 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0?v, i d =1?ma 80 - - v gate threshold voltage v gs(th) v ds = v gs , i d =90?a 2 2.8 3.5 zero gate voltage drain current i dss v ds =80?v, v gs =0?v, t j =25?c - 0.1 1 a v ds =80?v, v gs =0?v, t j =125?c - 10 100 gate-source leakage current i gss v gs =20?v, v ds =0?v - 1 100 na drain-source on-state resistance r ds(on) v gs =10?v, i d =60?a - 4.9 5.7 m w v gs =6?v, i d =30?a - 6.3 9.9 gate resistance r g - 2.2 - w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =60?a 45 90 - s values rev. 2.2 page 2 2015-08-2 7
ipa057n08n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 3570 4750 pf output capacitance c oss - 963 1280 reverse transfer capacitance c rss - 36 - turn-on delay time t d(on) - 17 - ns rise time t r - 42 - turn-off delay time t d(off) - 36 - fall time t f - 9 - gate charge characteristics 5) gate to source charge q gs - 18 - nc gate to drain charge q gd - 10 - switching charge q sw - 18 - gate charge total q g - 52 69 gate plateau voltage v plateau - 5.0 - v output charge q oss v dd =40?v, v gs =0?v - 70 93 nc reverse diode diode continous forward current i s - - 60 a diode pulse current i s,pulse - - 240 diode forward voltage v sd v gs =0?v, i f =60?a, t j =25?c - 1.0 1.2 v reverse recovery time t rr - 64 - ns reverse recovery charge q rr - 121 - nc 5) see figure 16 for gate charge parameter definition v r =40?v, i f = i s , d i f /d t =100?a/s t c =25?c values v gs =0?v, v ds =40?v, f =1?mhz v dd =40?v, v gs =10?v, i d =60?a, r g,ext =1.6? w v dd =40?v, i d =60?a, v gs =0?to?10?v rev. 2.2 page 3 2015-08-2 7
ipa057n08n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 i d [a] v ds [v] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] 0 10 20 30 40 50 0 50 100 150 200 p tot [w] t c [ c] 0 20 40 60 80 0 50 100 150 200 i d [a] t c [ c] rev. 2.2 page 4 2015-08-2 7
ipa057n08n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 4 8 12 16 20 0 40 80 120 160 200 240 r ds(on) [m w ] i d [a] 25 c 175 c 0 30 60 90 120 150 0 2 4 6 8 i d [a] v gs [v] 0 40 80 120 160 0 40 80 120 160 g fs [s] i d [a] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 40 80 120 160 200 240 0 1 2 3 4 5 i d [a] v ds [v] rev. 2.2 page 5 2015-08-2 7
ipa057n08n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =60 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ max 0 2 4 6 8 10 12 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] 90 a 900 a 0 1 2 3 4 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 20 40 60 80 c [pf] v ds [v] 25 c 175 c 25 c, 98% 175 c, 98% 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 i f [a] v sd [v] rev. 2.2 page 6 2015-08-2 7
ipa057n08n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =60 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 v 40 v 60 v 0 2 4 6 8 10 12 0 20 40 60 v gs [v] q gate [nc] 60 65 70 75 80 85 90 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 0.1 1 10 100 1000 i av [a] t av [s] rev. 2.2 page 7 2015-08-2 7
ipa057n08n3 g pg-to-220-3-31 rev. 2.2 page 8 2015-08-2 7
10 optimos?3power-transistor ipa057n08n3g rev.2.2,2015-08-27 revisionhistory ipa057n08n3 g revision:2015-08-27,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.2 2015-08-27 update features: "fully isolated package..." welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
|
